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1 Publikation
2006 | Artikel | FH-PUB-ID: 3538
Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann, Microelectronics Journal 37 (2006) 64–70.
HSBI-PUB
| DOI
A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann, Microelectronics Journal 37 (2006) 64–70.