{"date_updated":"2023-09-05T13:01:29Z","alternative_id":["3531"],"language":[{"iso":"eng"}],"type":"conference","conference":{"end_date":"2010-09-10","start_date":"2010-09-06","location":"Valencia, Spain","name":" 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion"},"abstract":[{"text":"Vacuum annealing studies of boron-doped zinc oxide films grown by low pressure chemical vapor\r\ndeposition (LPCVD) from diethylzinc and H2O vapour are reported. Electrical measurements show, depending\r\non the substrate temperature of the films, a moderate increase in conductivity and Hall mobility up to annealing\r\ntemperatures of about 200-300°C, followed by decreases at higher annealing temperature. Highest conductivity\r\nand mobility values ( ≈ 1000 S/cm and μ ≈ 35 cm2/Vs, respectively) were reached for material deposited at TS =\r\n175°C and annealed at 250°C. Effusion measurements show the release of molecules like H2, H2O and CH4\r\nstarting from 200-300°C. Effusion of implanted inert gases helium and neon for structural analysis show that the\r\nmicrostructure of as-deposited materials depends strongly on TS. For TS =150°C material, migration through\r\ninterconnected voids dominates He effusion while for material deposited at higher TS effusion from isolated\r\nvoids limits the helium release. After annealing up to 400-500°C, the latter effusion mechanism dominates all\r\ntypes of investigated LPCVD ZnO material. The results suggest that a low concentration of interconnected voids\r\nand/or a reduction by annealing is a prerequisite for obtaining improved electrical properties.","lang":"eng"}],"doi":"10.4229/25THEUPVSEC2010-3AV.1.74","publisher":"WIP-Munich","author":[{"full_name":"Beyer, W.","last_name":"Beyer","first_name":"W."},{"first_name":"Frank","id":"208487","full_name":"Hamelmann, Frank","last_name":"Hamelmann"},{"full_name":"Knipp, D.","last_name":"Knipp","first_name":"D."},{"last_name":"Lennartz","full_name":"Lennartz, D.","first_name":"D."},{"full_name":"Prunici, P.","last_name":"Prunici","first_name":"P."},{"first_name":"A.","full_name":"Raykov, A.","last_name":"Raykov"},{"last_name":"Stiebig","full_name":"Stiebig, H.","first_name":"H."}],"_id":"3568","status":"public","date_created":"2023-09-01T12:15:06Z","title":"Annealing Effects in LPCVD Grown Zinc Oxide Films","citation":{"short":"W. Beyer, F. Hamelmann, D. Knipp, D. Lennartz, P. Prunici, A. Raykov, H. Stiebig, in: WIP-Munich, 2010.","alphadin":"Beyer, W. ; Hamelmann, Frank ; Knipp, D. ; Lennartz, D. ; Prunici, P. ; Raykov, A. ; Stiebig, H.: Annealing Effects in LPCVD Grown Zinc Oxide Films. In: : WIP-Munich, 2010","chicago":"Beyer, W., Frank Hamelmann, D. Knipp, D. Lennartz, P. Prunici, A. Raykov, and H. Stiebig. “Annealing Effects in LPCVD Grown Zinc Oxide Films.” WIP-Munich, 2010. https://doi.org/10.4229/25THEUPVSEC2010-3AV.1.74.","apa":"Beyer, W., Hamelmann, F., Knipp, D., Lennartz, D., Prunici, P., Raykov, A., & Stiebig, H. (2010). Annealing Effects in LPCVD Grown Zinc Oxide Films. Presented at the 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain: WIP-Munich. https://doi.org/10.4229/25THEUPVSEC2010-3AV.1.74","ieee":"W. Beyer et al., “Annealing Effects in LPCVD Grown Zinc Oxide Films,” presented at the 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 2010.","bibtex":"@inproceedings{Beyer_Hamelmann_Knipp_Lennartz_Prunici_Raykov_Stiebig_2010, title={Annealing Effects in LPCVD Grown Zinc Oxide Films}, DOI={10.4229/25THEUPVSEC2010-3AV.1.74}, publisher={WIP-Munich}, author={Beyer, W. and Hamelmann, Frank and Knipp, D. and Lennartz, D. and Prunici, P. and Raykov, A. and Stiebig, H.}, year={2010} }","ama":"Beyer W, Hamelmann F, Knipp D, et al. Annealing Effects in LPCVD Grown Zinc Oxide Films. In: WIP-Munich; 2010. doi:10.4229/25THEUPVSEC2010-3AV.1.74","mla":"Beyer, W., et al. Annealing Effects in LPCVD Grown Zinc Oxide Films. WIP-Munich, 2010, doi:10.4229/25THEUPVSEC2010-3AV.1.74."},"user_id":"245590","publication_status":"published","year":"2010"}