Light-Induced Degradation of a-Si/µ-Si Thin Film Solar Cells under Different Climate Conditions and Its Influence on Performance

For analyzing the long-term behavior of micromorphous (a-Si/μc-Si tandem) thin film photovoltaic modules under different climatic and especially (sub-) tropical climate conditions, it is important to observe the lightinduced degradation (LID) in dependence of the module temperature. According to the IEC 61646 standard, the impact of LID on module parameters is determined at a constant temperature of 50°C with an irradiation of 1000 W/m² at open circuit conditions. Until now previous papers examined the LID of amorphous thin film solar cells with different temperatures and some other paper are about micromorphous silicon with an operating temperature of 50°C. Since the main reason for the degradation of micromorphous modules is the well-known Staebler Wronski effect in the amorphous part of the cell, the temperature dependence of the healing of defects is also taken into account. The measurement of degradation and regeneration at higher temperatures is the necessary base for exactly forecasts of yield in sunny regions at temperatures higher than those in central Europe.