{"abstract":[{"text":"For analyzing the long-term behavior of thin film a-Si/μc-Si photovoltaic modules, it is important to observe the light-induced degradation (LID) in dependence of the temperature for the parameters of the one-diode model for solar cells. According to the IEC 61646 standard, the impact of LID on module parameters of these thin film cells is determined at a constant temperature of 50°C with an irradiation of 1000 W/m2 at open circuit conditions. Previous papers examined the LID of thin film a-Si cells with different temperatures and some others are about a-Si/μc-Si. In these previous papers not all parameters of the one-diode model are examined. We observed the serial resistance (Rs), parallel resistance (Rp), short circuit current (Isc), open circuit voltage (Uoc), the maximum power point (MPP: Umpp, Impp and Pmpp) and the diode factor (n). Since the main reason for the LID of silicon-based thin films is the Staebler Wronski effect in the a-Si part of the cell, the temperature dependence of the healing of defects for all parameters of the one-diode model is also taken into account. We are also measuring modules with different kind of transparent conductive oxides: In a-Si thin film solar cells fluorine-doped tin oxide (FTO) is used and for thin film solar cells of a-Si/μc-Si boron- doped zinc oxide is used. In our work we describe an approach for transferring the parameters of a one-diode model for tandem thin film solar cells into the one-diode model for each part of the solar cell. The measurement of degradation and regeneration at higher temperatures is the necessary base for optimization of the different silicon-based thin films in warm hot climate.","lang":"eng"}],"publication_identifier":{"eissn":["1742-6596"]},"main_file_link":[{"url":"https://doi.org/10.1088/1742-6596/559/1/012017","open_access":"1"}],"type":"journal_article","article_number":"012017","language":[{"iso":"eng"}],"intvolume":"       559","date_updated":"2023-09-05T13:14:09Z","author":[{"last_name":"Weicht","full_name":"Weicht, J A","first_name":"J A"},{"full_name":"Hamelmann, Frank","last_name":"Hamelmann","first_name":"Frank","id":"208487"},{"full_name":"Behrens, G","last_name":"Behrens","first_name":"G"}],"oa":"1","publisher":"IOP Publishing","doi":"10.1088/1742-6596/559/1/012017","volume":559,"user_id":"245590","citation":{"mla":"Weicht, J. A., et al. “Parameter Variation of the One-Diode Model of a-Si and a- Si/Μc-Si Solar Cells for Modeling Light-Induced Degradation.” <i>Journal of Physics: Conference Series</i>, vol. 559, 012017, IOP Publishing, 2014, doi:<a href=\"https://doi.org/10.1088/1742-6596/559/1/012017\">10.1088/1742-6596/559/1/012017</a>.","ama":"Weicht JA, Hamelmann F, Behrens G. Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation. <i>Journal of Physics: Conference Series</i>. 2014;559. doi:<a href=\"https://doi.org/10.1088/1742-6596/559/1/012017\">10.1088/1742-6596/559/1/012017</a>","bibtex":"@article{Weicht_Hamelmann_Behrens_2014, title={Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation}, volume={559}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/559/1/012017\">10.1088/1742-6596/559/1/012017</a>}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Weicht, J A and Hamelmann, Frank and Behrens, G}, year={2014} }","alphadin":"<span style=\"font-variant:small-caps;\">Weicht, J A</span> ; <span style=\"font-variant:small-caps;\">Hamelmann, Frank</span> ; <span style=\"font-variant:small-caps;\">Behrens, G</span>: Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation. In: <i>Journal of Physics: Conference Series</i> Bd. 559, IOP Publishing (2014)","short":"J.A. Weicht, F. Hamelmann, G. Behrens, Journal of Physics: Conference Series 559 (2014).","ieee":"J. A. Weicht, F. Hamelmann, and G. Behrens, “Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation,” <i>Journal of Physics: Conference Series</i>, vol. 559, 2014.","apa":"Weicht, J. A., Hamelmann, F., &#38; Behrens, G. (2014). Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation. <i>Journal of Physics: Conference Series</i>, <i>559</i>. <a href=\"https://doi.org/10.1088/1742-6596/559/1/012017\">https://doi.org/10.1088/1742-6596/559/1/012017</a>","chicago":"Weicht, J A, Frank Hamelmann, and G Behrens. “Parameter Variation of the One-Diode Model of a-Si and a- Si/Μc-Si Solar Cells for Modeling Light-Induced Degradation.” <i>Journal of Physics: Conference Series</i> 559 (2014). <a href=\"https://doi.org/10.1088/1742-6596/559/1/012017\">https://doi.org/10.1088/1742-6596/559/1/012017</a>."},"title":"Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation","date_created":"2023-09-01T12:10:54Z","publication":"Journal of Physics: Conference Series","status":"public","_id":"3563","year":"2014","publication_status":"published"}