Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films
A. Klipp, F. Hamelmann, G. Haindl, J. Hartwich, U. Kleineberg, P. Jutzi, U. Heinzmann, Chemical Vapor Deposition 6 (2000) 63–66.
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Artikel
| Veröffentlicht
| Englisch
Autor*in
Klipp, A.;
Hamelmann, Frank
;
Haindl, G.;
Hartwich, J.;
Kleineberg, U.;
Jutzi, P.;
Heinzmann, U.
;
Haindl, G.;
Hartwich, J.;
Kleineberg, U.;
Jutzi, P.;
Heinzmann, U.Erscheinungsjahr
Zeitschriftentitel
Chemical Vapor Deposition
Band
6
Zeitschriftennummer
2
Seite
63-66
ISSN
eISSN
FH-PUB-ID
Zitieren
Klipp, A. ; Hamelmann, Frank ; Haindl, G. ; Hartwich, J. ; Kleineberg, U. ; Jutzi, P. ; Heinzmann, U.: Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films. In: Chemical Vapor Deposition Bd. 6, Wiley (2000), Nr. 2, S. 63–66
Klipp A, Hamelmann F, Haindl G, et al. Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films. Chemical Vapor Deposition. 2000;6(2):63-66. doi:10.1002/(SICI)1521-3862(200004)6:2<63::AID-CVDE63>3.0.CO;2-Q
Klipp, A., Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., & Heinzmann, U. (2000). Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films. Chemical Vapor Deposition, 6(2), 63–66. https://doi.org/10.1002/(SICI)1521-3862(200004)6:2<63::AID-CVDE63>3.0.CO;2-Q
@article{Klipp_Hamelmann_Haindl_Hartwich_Kleineberg_Jutzi_Heinzmann_2000, title={Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films}, volume={6}, DOI={10.1002/(SICI)1521-3862(200004)6:2<63::AID-CVDE63>3.0.CO;2-Q}, number={2}, journal={Chemical Vapor Deposition}, publisher={Wiley}, author={Klipp, A. and Hamelmann, Frank and Haindl, G. and Hartwich, J. and Kleineberg, U. and Jutzi, P. and Heinzmann, U.}, year={2000}, pages={63–66} }
Klipp, A., Frank Hamelmann, G. Haindl, J. Hartwich, U. Kleineberg, P. Jutzi, and U. Heinzmann. “Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films.” Chemical Vapor Deposition 6, no. 2 (2000): 63–66. https://doi.org/10.1002/(SICI)1521-3862(200004)6:2<63::AID-CVDE63>3.0.CO;2-Q.
A. Klipp et al., “Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films,” Chemical Vapor Deposition, vol. 6, no. 2, pp. 63–66, 2000.
Klipp, A., et al. “Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films.” Chemical Vapor Deposition, vol. 6, no. 2, Wiley, 2000, pp. 63–66, doi:10.1002/(SICI)1521-3862(200004)6:2<63::AID-CVDE63>3.0.CO;2-Q.
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