In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors
F. Hamelmann, G. Haindl, J. Hartwich, U. Kleineberg, U. Heinzmann, A. Klipp, S.H.A. Petri, P. Jutzi, in: N. Auner, J. Weis (Eds.), Organosilicon Chemistry IV, Wiley-VCH Verlag GmbH, Weinheim, Germany, 2000, pp. 798–805.
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Buchbeitrag
| Veröffentlicht
| Englisch
Autor*in
Hamelmann, Frank
;
Haindl, G.;
Hartwich, J.;
Kleineberg, U.;
Heinzmann, U.;
Klipp, A.;
Petri, S. H. A.;
Jutzi, P.
;
Haindl, G.;
Hartwich, J.;
Kleineberg, U.;
Heinzmann, U.;
Klipp, A.;
Petri, S. H. A.;
Jutzi, P.Herausgeber*in
Auner, Norbert;
Weis, Johann
Erscheinungsjahr
Buchtitel
Organosilicon Chemistry IV
Seite
798-805
ISBN
FH-PUB-ID
Zitieren
Hamelmann, Frank ; Haindl, G. ; Hartwich, J. ; Kleineberg, U. ; Heinzmann, U. ; Klipp, A. ; Petri, S. H. A. ; Jutzi, P.: In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors. In: Auner, N. ; Weis, J. (Hrsg.): Organosilicon Chemistry IV. Weinheim, Germany : Wiley-VCH Verlag GmbH, 2000, S. 798–805
Hamelmann F, Haindl G, Hartwich J, et al. In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors. In: Auner N, Weis J, eds. Organosilicon Chemistry IV. Weinheim, Germany: Wiley-VCH Verlag GmbH; 2000:798-805. doi:10.1002/9783527619917.ch122
Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Heinzmann, U., Klipp, A., … Jutzi, P. (2000). In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors. In N. Auner & J. Weis (Eds.), Organosilicon Chemistry IV (pp. 798–805). Weinheim, Germany: Wiley-VCH Verlag GmbH. https://doi.org/10.1002/9783527619917.ch122
@inbook{Hamelmann_Haindl_Hartwich_Kleineberg_Heinzmann_Klipp_Petri_Jutzi_2000, place={Weinheim, Germany}, title={In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors}, DOI={10.1002/9783527619917.ch122}, booktitle={Organosilicon Chemistry IV}, publisher={Wiley-VCH Verlag GmbH}, author={Hamelmann, Frank and Haindl, G. and Hartwich, J. and Kleineberg, U. and Heinzmann, U. and Klipp, A. and Petri, S. H. A. and Jutzi, P.}, editor={Auner, Norbert and Weis, JohannEditors}, year={2000}, pages={798–805} }
Hamelmann, Frank, G. Haindl, J. Hartwich, U. Kleineberg, U. Heinzmann, A. Klipp, S. H. A. Petri, and P. Jutzi. “In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors.” In Organosilicon Chemistry IV, edited by Norbert Auner and Johann Weis, 798–805. Weinheim, Germany: Wiley-VCH Verlag GmbH, 2000. https://doi.org/10.1002/9783527619917.ch122.
F. Hamelmann et al., “In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors,” in Organosilicon Chemistry IV, N. Auner and J. Weis, Eds. Weinheim, Germany: Wiley-VCH Verlag GmbH, 2000, pp. 798–805.
Hamelmann, Frank, et al. “In-Situ Controlled Deposition of Thin Silicon Films by Hot-Filament MOCVD with (C5Me5)Si2H5 and (C5Me4H)SiH3 as Silicon Precursors.” Organosilicon Chemistry IV, edited by Norbert Auner and Johann Weis, Wiley-VCH Verlag GmbH, 2000, pp. 798–805, doi:10.1002/9783527619917.ch122.
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