Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann, Microelectronics Journal 37 (2006) 64–70.
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Artikel
| Veröffentlicht
| Englisch
Autor*in
Szekeres, A.;
Nikolova, T.;
Simeonov, S.;
Gushterov, A.;
Hamelmann, Frank
;
Heinzmann, U.
;
Heinzmann, U.Erscheinungsjahr
Zeitschriftentitel
Microelectronics Journal
Band
37
Zeitschriftennummer
1
Seite
64-70
ISSN
FH-PUB-ID
Zitieren
Szekeres, A. ; Nikolova, T. ; Simeonov, S. ; Gushterov, A. ; Hamelmann, Frank ; Heinzmann, U.: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. In: Microelectronics Journal Bd. 37, Elsevier BV (2006), Nr. 1, S. 64–70
Szekeres A, Nikolova T, Simeonov S, Gushterov A, Hamelmann F, Heinzmann U. Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal. 2006;37(1):64-70. doi:10.1016/j.mejo.2005.06.013
Szekeres, A., Nikolova, T., Simeonov, S., Gushterov, A., Hamelmann, F., & Heinzmann, U. (2006). Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal, 37(1), 64–70. https://doi.org/10.1016/j.mejo.2005.06.013
@article{Szekeres_Nikolova_Simeonov_Gushterov_Hamelmann_Heinzmann_2006, title={Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices}, volume={37}, DOI={10.1016/j.mejo.2005.06.013}, number={1}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Szekeres, A. and Nikolova, T. and Simeonov, S. and Gushterov, A. and Hamelmann, Frank and Heinzmann, U.}, year={2006}, pages={64–70} }
Szekeres, A., T. Nikolova, S. Simeonov, A. Gushterov, Frank Hamelmann, and U. Heinzmann. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride as an Alternative Material for Gate Dielectric in MOS Devices.” Microelectronics Journal 37, no. 1 (2006): 64–70. https://doi.org/10.1016/j.mejo.2005.06.013.
A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, and U. Heinzmann, “Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices,” Microelectronics Journal, vol. 37, no. 1, pp. 64–70, 2006.
Szekeres, A., et al. “Plasma-Assisted Chemical Vapor Deposited Silicon Oxynitride as an Alternative Material for Gate Dielectric in MOS Devices.” Microelectronics Journal, vol. 37, no. 1, Elsevier BV, 2006, pp. 64–70, doi:10.1016/j.mejo.2005.06.013.
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