Changes in temperature-coefficient of the diode model caused by light-induced degradation of a-Si/μc-Si solar cells

In our work we observe the temperature coefficients before and after light-induced degradation of amorphous/micro-crystalline (a-Si/μc-Si) tandem silicon-based solar cells. We show that during light-induced degradation the temperature parameters of the serial and parallel resistance, photo current and the saturation current in the diode model change: the temperature has a stronger effect after the light-induced degradation, the temperaturecoefficient of silicon-based thin film solar cells varies during the light-induced degradation.